Fast and non-destructive analysis of material defect is a crucial demand for semiconductor devices. Herein, we are devoted to exploring a solar-cell defect analysis method based on machine learning of the mo. Electronic defect is one of the most fundamental and important physical properties of a. 2.1. Charge-carrier mechanism of perturbation TPVIn a complete cell, charge-carrier processes are determined by a series of time-dependent charg. In this work, based on a comprehensive understanding of the generation and decay mechanism of the perturbation photovoltage, we have explored to develop a defect analysis. Y. S. Li, J. Shi and Q. Meng conceived the idea. Y. S. Li conducted device simulation, machine learning programming, data analysis and paper writing. Y. M. Li contributed to th. The authors are very grateful to Prof. Yuan Lin (Institute of Chemistry, Chinese Academy of Science), Dr. Nicola Courtier (University of Oxford, UK), and Dr. Haili Wang (COMSO.
